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On the Baliga's Figure-Of-Merits (BFOM) Enhancement of a Novel GaN Nano-Pillar Vertical Field Effect Transistor (FET) with 2DEG Channel and Patterned Substrate | SpringerLink
![Bandgap, Mobility, Dielectric Constant, and Baliga's Figure of Merit of 4H-SiC, GaN, and β-Ga2O3 from 300 to 620 K | ACS Applied Electronic Materials Bandgap, Mobility, Dielectric Constant, and Baliga's Figure of Merit of 4H-SiC, GaN, and β-Ga2O3 from 300 to 620 K | ACS Applied Electronic Materials](https://pubs.acs.org/cms/10.1021/acsaelm.2c00766/asset/images/medium/el2c00766_0005.gif)
Bandgap, Mobility, Dielectric Constant, and Baliga's Figure of Merit of 4H-SiC, GaN, and β-Ga2O3 from 300 to 620 K | ACS Applied Electronic Materials
![On the Baliga's Figure-Of-Merits (BFOM) Enhancement of a Novel GaN Nano-Pillar Vertical Field Effect Transistor (FET) with 2DEG Channel and Patterned Substrate | SpringerLink On the Baliga's Figure-Of-Merits (BFOM) Enhancement of a Novel GaN Nano-Pillar Vertical Field Effect Transistor (FET) with 2DEG Channel and Patterned Substrate | SpringerLink](https://media.springernature.com/lw685/springer-static/image/art%3A10.1186%2Fs11671-019-2960-8/MediaObjects/11671_2019_2960_Fig10_HTML.png)
On the Baliga's Figure-Of-Merits (BFOM) Enhancement of a Novel GaN Nano-Pillar Vertical Field Effect Transistor (FET) with 2DEG Channel and Patterned Substrate | SpringerLink
![On the Baliga's Figure-Of-Merits (BFOM) Enhancement of a Novel GaN Nano-Pillar Vertical Field Effect Transistor (FET) with 2DEG Channel and Patterned Substrate | SpringerLink On the Baliga's Figure-Of-Merits (BFOM) Enhancement of a Novel GaN Nano-Pillar Vertical Field Effect Transistor (FET) with 2DEG Channel and Patterned Substrate | SpringerLink](https://media.springernature.com/lw685/springer-static/image/art%3A10.1186%2Fs11671-019-2960-8/MediaObjects/11671_2019_2960_Fig8_HTML.png)
On the Baliga's Figure-Of-Merits (BFOM) Enhancement of a Novel GaN Nano-Pillar Vertical Field Effect Transistor (FET) with 2DEG Channel and Patterned Substrate | SpringerLink
![Bandgap, Mobility, Dielectric Constant, and Baliga's Figure of Merit of 4H-SiC, GaN, and β-Ga2O3 from 300 to 620 K | ACS Applied Electronic Materials Bandgap, Mobility, Dielectric Constant, and Baliga's Figure of Merit of 4H-SiC, GaN, and β-Ga2O3 from 300 to 620 K | ACS Applied Electronic Materials](https://pubs.acs.org/cms/10.1021/acsaelm.2c00766/asset/images/medium/el2c00766_0002.gif)
Bandgap, Mobility, Dielectric Constant, and Baliga's Figure of Merit of 4H-SiC, GaN, and β-Ga2O3 from 300 to 620 K | ACS Applied Electronic Materials
![Figure 7 from Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison | Semantic Scholar Figure 7 from Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/c0faaba4fe82c21cce9706415f1d3832ff07db7b/5-Figure7-1.png)
Figure 7 from Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison | Semantic Scholar
![6. The Baliga high frequency figure of merit for high frequency and... | Download Scientific Diagram 6. The Baliga high frequency figure of merit for high frequency and... | Download Scientific Diagram](https://www.researchgate.net/publication/281712335/figure/fig10/AS:287014722261013@1445441050969/The-Baliga-high-frequency-figure-of-merit-for-high-frequency-and-power-transistors-The.png)
6. The Baliga high frequency figure of merit for high frequency and... | Download Scientific Diagram
![Simulation design of high Baliga's figure of merit normally-off PGaN gate AlGaN/GaN heterostructure field effect transistors with junction field plates - ScienceDirect Simulation design of high Baliga's figure of merit normally-off PGaN gate AlGaN/GaN heterostructure field effect transistors with junction field plates - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0749603618312539-egi10KBWHZM5XF.jpg)
Simulation design of high Baliga's figure of merit normally-off PGaN gate AlGaN/GaN heterostructure field effect transistors with junction field plates - ScienceDirect
![A summary of the main power device figure of merit (or Baliga's figure... | Download Scientific Diagram A summary of the main power device figure of merit (or Baliga's figure... | Download Scientific Diagram](https://www.researchgate.net/publication/358337911/figure/fig2/AS:1119511839293440@1643923830184/A-summary-of-the-main-power-device-figure-of-merit-or-Baligas-figure-of-merit-BFOM.png)
A summary of the main power device figure of merit (or Baliga's figure... | Download Scientific Diagram
![Bandgap, Mobility, Dielectric Constant, and Baliga's Figure of Merit of 4H-SiC, GaN, and β-Ga2O3 from 300 to 620 K | ACS Applied Electronic Materials Bandgap, Mobility, Dielectric Constant, and Baliga's Figure of Merit of 4H-SiC, GaN, and β-Ga2O3 from 300 to 620 K | ACS Applied Electronic Materials](https://pubs.acs.org/cms/10.1021/acsaelm.2c00766/asset/images/medium/el2c00766_0004.gif)
Bandgap, Mobility, Dielectric Constant, and Baliga's Figure of Merit of 4H-SiC, GaN, and β-Ga2O3 from 300 to 620 K | ACS Applied Electronic Materials
![Power Semiconductor Device Figure of Merit for High-Power-Density Converter Design Applications | Semantic Scholar Power Semiconductor Device Figure of Merit for High-Power-Density Converter Design Applications | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/79955de6dae7b26926f01941e04136f160fdc525/3-TableII-1.png)